2/12/2024 9:20:38 AM
Abstract: High-voltage superjunction MOSFET using charge balancing technology.
onsemi NVBG095N65S3F n-channel superet III MOSFET is a high-voltage super-junction (SJ) MOSFET using charge balancing technology. This power MOSFET offers less conduction losses, superior switching performance, and withstands extreme dv/dt rates. The NVBG095N65S3F n-channel superet III MOSFET optimizes body diode reverse recovery performance, eliminating additional components and improving system reliability. The MOSFET is AEC-Q101 qualified, PPAP capable, lead-free, and RoHS compliant. Typical applications include automotive on-board chargers and automotive DC/DC converters for pure electric vehicles.
700v @t (j) = 150°c
Typical R(DS(on)) = 78m
Ultra-low gate charge (typ. Q(g) = 66nC)
Low effective output capacitance (typ. C(loss(eff)) = 597pF)
100% avalanche tested
Passed AEC-Q101 certification and has PPAP capabilities
Pb-free
Passed lead-free certification
car charger
DC/DC converter for electric vehicles
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