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Introduction, characteristics, and applications of Infineon CoolSiC automotive 1200V G1 SiC trench mosfet

2/5/2024 9:45:07 AM

Summary: Provides best-in-class switching performance with robustness against parasitic turn-on.

CoolSiC automotive 1200V G1 SiC mosfet Infineon

Infineon CoolSiC Automotive 1200V G1 SiC trench mosfets provide higher power density, higher efficiency and higher reliability. The granular product portfolio features 1200V SiC mosfets in packages to -247-3pin, to -247-4pin and D2PAK-7pin, with R(DS(on)) ranging from 8.7 milliohms to 160 milliohms, ID +25°C, maximum 17A to 205A. High power density, excellent efficiency, bidirectional charging capabilities and significantly reduced system costs make Infineon Technologies' 1200V Automotive CoolSiC MOSFET modules ideal for onboard chargers and DC-DC applications. TO and SMD components are also equipped with Kelvin source pins to optimize switching performance.


characteristic

  • Revolutionary silicon carbide semiconductor material

  • Very low switching losses

  • Increase the on-voltage V(GS(on)) 20V

  • Compatible with igbt driving voltage

  • 0V turn-off gate voltage

  • Reference gate threshold voltage V(GS(the)) = 4.5V

  • Best-in-class switching energy

  • Device capacitance is low

  • No threshold on-state feature

  • Temperature-independent turn-off switching losses

  • .XT mold attachment technology with best-in-class thermal performance

  • Fully controllable dv/dt

  • Sense pin for optimized switching performance

  • Suitable for high voltage leakage requirements

  • Thin leads reduce risk of solder bridges

  • Rectifier Robust Body Diode, Ready for Synchronous Rectification

  • -55℃~ +175℃ operating temperature range

  • Lead-free, halogen-free, RoHS compliant


app

  • car charger and pfc

  • Boosters and DC/DC converters

  • Auxiliary inverter

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