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Introduction, characteristics, and applications of ROHM Semiconductor RF6G035BG power MOSFET

2/29/2024 9:35:00 AM

Summary: Characteristics: 40V VDSS, ±3.5A ID, 46 milliohm low on-resistance (RDS(on)), 1W power consumption (PD).

ROHM Semiconductor RF6G035BG power MOSFET

ROHM Semiconductor RF6G035BG power MOSFET features 40V drain-to-source voltage (V(DSS)) and ±3.5A continuous drain current (I(D)). This n-channel MOSFET offers low on-resistance (R(DS(on))) of 46 milliohms and power dissipation of 1W (P(D)). The RF6G035BG MOSFET operates over -55°C to 150°C operating junction and storage temperature range, and is available in a halogen-free small surface mount package (TUMT6 or SOT-363T). This ROHS-compliant device includes lead-free plating. The RF6G035BG power MOSFET is suitable for switching, motor drive and DC/DC converter applications.


characteristic

  • Low on-resistance

  • Lead-free plating, compliant with RoHS standards

  • Small surface mount package (TUMT6/SOT-363T)

  • Halogen-free


specification

  • Drain-source voltage (V(DSS))

  • ±20V gate-source voltage (V(GSS))

  • -55°C to 150°C operating junction and storage temperature range

  • 46 milliohmR (DS(upper)(max)

  • ±3.5A continuous drain current (I(D))

  • 1W power consumption (P(D))


app

  • Motor driver

  • switch

  • DC/DC converter


Vitu


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