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Introduction, characteristics, and applications of ROHM Semiconductor RQ3L060BG power MOSFET

2/15/2024 9:00:00 AM

Summary: Characteristics VDSS 60V, ±15.a ID, 38 milliohm low on-resistance (RDS(on)), 14W power consumption.

RQ3L060BG ROHM Semiconductor

ROHM Semiconductor RQ3L060BG power MOSFET features 60V drain-to-source voltage (V(DSS)) and ±15.a continuous drain current. This n-channel MOSFET offers a low on-resistance (R(DS(on))) of 38 milliohms and a power dissipation of 14W. The RQ3L060BG MOSFET operates over the -55°C to 150°C operating junction and storage temperature range and is available in a halogen-free, high-power small die package (HSMT8). This ROHS compliant device includes lead-free plating. Typical applications include switches, motor drives and DC/DC converters.


characteristic

  • Low on-resistance

  • High power small die package (HSMT8)

  • Lead-free plating, compliant with RoHS standards

  • Halogen-free

  • 100% Rg and ui tested


specification

  • 60V drain-source voltage (V(DSS))

  • Gate-source voltage (V(GSS))

  • -55°C to 150°C operating junction and storage temperature range

  • 38 milliohmR (DS(upper)(max)

  • ±15.a continuous drain current (I(D))

  • 14W power consumption


app

  • switch

  • Motor driver

  • DC/DC converter


internal circuit


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