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Introduction, characteristics, and applications of onsemi NVBG1000N170M1 silicon carbide (SiC) MOSFET

2/23/2024 9:45:00 AM

Summary: 1700V M1 planar SiC MOSFET optimized for fast switching applications.

onsemi NVBG1000N170M1 silicon carbide (SiC) MOSFET

onsemi's NVBG1000N170M1 silicon carbide (SiC) MOSFET is a 1700V M1 planar device optimized for fast switching applications. Planar technology reliably drives with negative gate voltages and turns off spikes on the gate. This n-channel ElteSiC MOSFET offers best performance with 20V gate drive, but also works well with 18V gate drive.


characteristic

  • When the gate-source voltage is 20V, the drain-source on-resistance is 960 milliohms

  • Ultra low gate charge 14nc

  • High-speed switching with low capacitance of 11pF

  • n channel

  • 100% avalanche tested

  • Passed AEC-Q101 certification and has ppap capability

  • D2PAK-7L case

  • Halide-free, RoHS compliant, exempt from 7a, lead-free 2LI (secondary interconnect)


app

  • backhaul converter

  • Automotive Electric Vehicles/Hepatitis E Virus


specification

  • 1700 maximum drain-source voltage

  • Maximum gate-source voltage -15V/+25V, recommended operating value -5V/+20V

  • 3.0A (+100°C) to 4.3A (+25°C) maximum continuous drain current range

  • Maximum power consumption range 25W (+100℃) ~ 51W (+25℃)

  • 14.6A maximum pulse drain current

  • 10A maximum source current (body diode)

  • 24mJ maximum single pulse drain-source avalanche energy

  • -55°C to +175°C operating junction temperature range

  • +270°C maximum soldering temperature

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