2/26/2024 9:00:00 AM
Summary: Provides excellent switching performance, high reliability/efficiency, and reduced EMI.
onsemi NDSH20120CDN silicon carbide (SiC) Schottky diodes offer superior switching performance and higher reliability compared to silicon. The NDSH20120CDN in TO-247-3LD package features no reverse recovery current, temperature-independent switching characteristics and excellent thermal performance. The advantages of the system include high efficiency, fast operating frequency, high power density, low EMI, small system size, and low cost. This EliteSiC diode offers a positive temperature coefficient and is easy to parallel.
+175°C maximum junction temperature
49mJ avalanche level, single pulse
High surge current capacity
positive temperature coefficient
Easy to parallelize
No reverse/forward recovery
- 247 - 3 - ld case
Halide-free, RoHS compliant, exempt from 7a, lead-free 2LI (secondary interconnect)
Universal
Switching power supply (SMPS), solar inverter, uninterruptible power supply (UPS)
Power switch circuit
1200V maximum peak repetitive reverse voltage
Maximum continuous rectifier forward current range
20A ~ 24A per device
10A to 12A per branch
Maximum forward surge current
459A to 564A non-repetitive peak range
59 year old non-repetitive
31 a repeat
Maximum power consumption
94W at +25℃
16W +150°C
1.39V to 1.94V typical forward voltage range
Maximum reverse current 200µA
46nC typical total capacitive charge
32pF (800V) to 680pF (1V) typical total capacitance range
Maximum thermal resistance
0.65°C/W junction-to-shell ratio per device
1.6°C/W connector - housing each leg
40°C/W junction-to-ambient
-55℃~ +175℃ operating temperature range
Phone