2/26/2024 9:05:00 AM
Summary: Provides superior switching performance and higher reliability than silicon in the TO-247-3LD package.
onsemi's NDSH30120CDN silicon carbide (SiC) Schottky diode provides superior switching performance and higher reliability than silicon in the TO-247-3LD package. NDSH30120CDN features no reverse recovery current, temperature-independent switching characteristics and excellent thermal performance. The advantages of the system include high efficiency, fast operating frequency, high power density, low EMI, small system size, and low cost. This EliteSiC diode offers a positive temperature coefficient and high surge current capability.
+175°C maximum junction temperature
110mJ avalanche level, single pulse
High surge current capacity
positive temperature coefficient
Easy to parallelize
No reverse/forward recovery
- 247 - 3 - ld case
Halide-free, RoHS compliant, exempt from 7a, lead-free 2LI (secondary interconnect)
Universal
Switching power supply (SMPS), solar inverter, uninterruptible power supply (UPS)
Power switch circuit
1200V maximum peak repetitive reverse voltage
Maximum continuous rectifier forward current range
30A to 38A per device
15A to 19A per leg
Maximum forward surge current
735A to 749A non-repetitive peak range
In 1991, a non-repeating
39 a repeat
Maximum power consumption
158W +25°C
26W at +150°C
1.40V to 1.98V typical forward voltage range
Maximum reverse current 200µA
64nC typical total capacitive charge
44pF (800V) to 927pF (1V) typical total capacitance range
Maximum thermal resistance
0.46°C/W shell-to-junction ratio per device
0.95°C/W each leg connected to housing
40°C/W junction-to-ambient
-55℃~ +175℃ operating temperature range
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