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Introduction, characteristics, and applications of NDSH10120C-F155 silicon carbide Schottky diode

2/26/2024 9:10:00 AM

Summary: Provides superior switching performance, high reliability/efficiency and higher power density.

NDSH10120C-F155 silicon carbide Schottky diode

onsemi NDSH10120C-F155 silicon carbide (SiC) Schottky diodes offer superior switching performance and higher reliability compared to silicon. EliteSiC NDSH10120C-F155 features no reverse recovery current, temperature independent switching characteristics and excellent thermal performance. The advantages of the system include high efficiency, fast operating frequency, high power density, low EMI, small system size, and low cost. Applications include general purpose, SMPS, solar inverter, UPS and power switching circuits.


characteristic

  • +175°C maximum junction temperature

  • 49mJ avalanche rated, single pulse

  • High surge current capacity

  • positive temperature coefficient

  • Easy to parallelize

  • No reverse/forward recovery

  • - 247 - 2 - ld case

  • Lead-free, halogen-free/brominated-free flame retardant, compliant with RoHS standards


app

  • Universal

  • Switching power supply (SMPS), solar inverter, uninterruptible power supply (UPS)

  • Power switch circuit


specification

  • 1200V maximum peak repetitive reverse voltage

  • 10A to 12A maximum continuous rectified forward current range

  • Maximum forward surge current

    • 459A to 546A non-repetitive peak range

    • 59 year old non-repetitive

    • 31 a repeat

  • Maximum power consumption

    • 94W at +25℃

    • 16W +150°C

  • 1.39V to 1.94V typical forward voltage range

  • Maximum reverse current 200µA

  • 46nC typical total capacitive charge

  • 32pF (800V) to 680pF (1V) typical total capacitance range

  • Maximum thermal resistance

    • 1.6°C/W junction-to-case

    • 40°C/W junction-to-ambient

  • -55℃~ +175℃ operating temperature range

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