2/26/2024 9:10:00 AM
Summary: Provides superior switching performance, high reliability/efficiency and higher power density.
onsemi NDSH10120C-F155 silicon carbide (SiC) Schottky diodes offer superior switching performance and higher reliability compared to silicon. EliteSiC NDSH10120C-F155 features no reverse recovery current, temperature independent switching characteristics and excellent thermal performance. The advantages of the system include high efficiency, fast operating frequency, high power density, low EMI, small system size, and low cost. Applications include general purpose, SMPS, solar inverter, UPS and power switching circuits.
+175°C maximum junction temperature
49mJ avalanche rated, single pulse
High surge current capacity
positive temperature coefficient
Easy to parallelize
No reverse/forward recovery
- 247 - 2 - ld case
Lead-free, halogen-free/brominated-free flame retardant, compliant with RoHS standards
Universal
Switching power supply (SMPS), solar inverter, uninterruptible power supply (UPS)
Power switch circuit
1200V maximum peak repetitive reverse voltage
10A to 12A maximum continuous rectified forward current range
Maximum forward surge current
459A to 546A non-repetitive peak range
59 year old non-repetitive
31 a repeat
Maximum power consumption
94W at +25℃
16W +150°C
1.39V to 1.94V typical forward voltage range
Maximum reverse current 200µA
46nC typical total capacitive charge
32pF (800V) to 680pF (1V) typical total capacitance range
Maximum thermal resistance
1.6°C/W junction-to-case
40°C/W junction-to-ambient
-55℃~ +175℃ operating temperature range
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