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Introduction, characteristics, and applications of onsemi NDSH20120C-F155 silicon carbide Schottky diode

2/26/2024 9:15:00 AM

Summary: Provides superior switching performance, high reliability/efficiency and higher power density.

onsemi NDSH20120C-F155 silicon carbide Schottky diode

onsemi NDSH20120C-F155 silicon carbide (SiC) Schottky diodes offer superior switching performance and higher reliability compared to silicon. NDSH20120C-F155 features no reverse recovery current, temperature-independent switching characteristics and excellent thermal performance. The advantages of the system include high efficiency, fast operating frequency, high power density, low EMI, small system size, and low cost. This EliteSiC diode offers a positive temperature coefficient and is easy to parallel.


characteristic

  • +175°C maximum junction temperature

  • 166mJ avalanche rated single pulse

  • High surge current capacity

  • positive temperature coefficient

  • Easy to parallelize

  • No reverse/forward recovery

  • - 247 - 2 - ld case

  • Lead-free, halogen-free/brominated-free flame retardant, compliant with RoHS standards


app

  • Universal

  • Switching power supply (SMPS), solar inverter, uninterruptible power supply (UPS)

  • Power switch circuit


specification

  • 1200V maximum peak repetitive reverse voltage

  • 20A to 26A maximum continuous rectified forward current range

  • Maximum forward surge current

    • 854A to 896A non-repetitive peak range

    • 119 years, a non-repeating

    • 40 a repeat

  • Maximum power consumption

    • 214W +25°C

    • 35W at +150°C

  • 1.38V to 1.87V typical forward voltage range

  • Maximum reverse current 200µA

  • 100nC typical total capacitive charge

  • Typical total capacitance range 58pF (800V) to 1480pF (1V)

  • Maximum thermal resistance

    • 0.7°C/W junction-to-case

    • 40°C/W junction-to-ambient

  • -55℃~ +175℃ operating temperature range

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