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Introduction, characteristics, and applications of silicon carbide Schottky diodes

2/26/2024 9:20:00 AM

Summary: Features temperature-independent switching and excellent thermal performance.

onsemi NDSH30120C-F155

onsemi NDSH30120C-F155 silicon carbide (SiC) Schottky diodes offer superior switching performance and higher reliability compared to silicon. NDSH30120C-F155 features no reverse recovery current, temperature-independent switching characteristics and excellent thermal performance. The advantages of the system include high efficiency, fast operating frequency, high power density, low EMI, small system size, and low cost. This EliteSiC diode offers a positive temperature coefficient and is easy to parallel. Applications include general purpose, SMPS, solar inverter, UPS and power switching circuits.


characteristic

  • +175°C maximum junction temperature

  • 196mJ avalanche rated single pulse

  • High surge current capacity

  • positive temperature coefficient

  • Easy to parallelize

  • No reverse/forward recovery

  • - 247 - 2 - ld case

  • Lead-free, halogen-free/brominated-free flame retardant, compliant with RoHS standards


app

  • Universal

  • Switching power supply (SMPS), solar inverter, uninterruptible power supply (UPS)

  • Power switch circuit


specification

  • 1200V maximum peak repetitive reverse voltage

  • 30A to 38A maximum continuous rectified forward current range

  • Maximum forward surge current

    • Non-repetitive peak range 994A to 1078A

    • 161, a non-repeating

    • 57 a repeat

  • Maximum power consumption

    • 333W at +25°C

    • 56W at +150°C

  • 1.41V to 1.97V typical forward voltage range

  • Maximum reverse current 200µA

  • 132nC typical total capacitive charge

  • Typical total capacitance range 88pF (800V) to 1961pF (1V)

  • Maximum thermal resistance

    • 0.45°C/W junction-to-case

    • 40°C/W junction-to-ambient

  • -55℃~ +175℃ operating temperature range

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