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Introduction, characteristics, and applications of onsemi NVBLS1D5N10MC n-channel PowerTrench MOSFET

2/26/2024 9:40:00 AM

Summary: Features high thermal performance and low RDS(on) to minimize conduction losses.

onsemi NVBLS1D5N10MC n-channel PowerTrench MOSFET

onsemi NVBLS1D5N10MC n-channel PowerTrench MOSFETs feature high thermal performance and low R(DS(on)) to minimize conduction losses. The NVBLS1D5N10MC is AEC-Q101 certified and has PPAP functionality, making it ideal for automotive applications.

The onsemi NVBLS1D5N10MC MOSFET is available in a TOLL package with an operating junction and storage temperature range of -55°C to +175°C.


characteristic

  • Low R(DS(on)), minimizing conduction losses

  • Low Q(G) and capacitance minimize driver losses

  • Passed AEC-Q101 certification and has PPAP capabilities

  • Reduce switching noise/EMI

  • Lead-free, RoHS compliant


app

  • switching power supply

  • Battery reverse protection

  • Power switches (high-side driver, low-side driver, h-bridge, etc.)


specification

  • Maximum continuous drain current 300A

  • 1.5 milliohm max 10V R(DS(ON))

  • 100V drain-to-source voltage

  • ±20V gate-source voltage

  • 900A pulsed drain current

  • -55°C to +175°C operating junction and storage temperature range


Typical applications


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